3

Selectively etched undercut apertures in AlAsSb-based VCSELs

Hall, E., Nakagawa, S., Almuneau, G., Kim, J.K., Coldren, L.A.
Journal:
IEEE Photonics Technology Letters
Année:
2001
Langue:
english
Fichier:
PDF, 55 KB
english, 2001
28

Oxide-confined mid-infrared VCSELs

Almuneau, G., Laaroussi, Y., Rumeau, A., Tourte, C., Levallois, C., Paranthoën, C., Sanchez, D., Cerutti, L.
Journal:
Electronics Letters
Année:
2012
Langue:
english
Fichier:
PDF, 389 KB
english, 2012
38

[IEEE 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (Cat. No.97TH8276) - Montreal, Que., Canada (11-15 Aug. 1997)] 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (C - AlGaAsSb/AlAsSb Bragg mirrors on InP for 1.3 and 1.55 μm vertical cavity surface emitting lasers

Almuneau, G., Genty, F., Chusseau, L., Gaillard, S., Bertru, N., Jacquet, J.
Année:
1997
Langue:
english
Fichier:
PDF, 194 KB
english, 1997
43

Near-infrared electroabsorption in p+/n−/n+ GaSb diodes

Gouskov, L., Pérotin, M., Almuneau, G., Luquet, H.
Journal:
Journal of Applied Physics
Année:
1996
Langue:
english
Fichier:
PDF, 326 KB
english, 1996